Summary

Elementary silicon is produced through combustion, vaporization, and condensation, followed by processes such as purification, ultrafine classification, and surface treatment.

Feature

High purity, high spheroidization rate, small particle size, narrow distribution, and high filling rate; low content of large spheres and hollow spheres, easy to disperse, and low sodium content; low coefficient of thermal expansion and excellent dielectric properties.

Function

High-speed and high-frequency copper-clad laminate, BT substrate, solid encapsulant material, liquid encapsulant material, IC substrates, ABF (Ajinomoto Build-up Film).